REDUCTION OF INELASTIC-SCATTERING EFFECT BY INTRODUCTION OF GAINAS GAINP STRAIN-COMPENSATED SUPERLATTICE INTO MULTIQUANTUM BARRIERS/

The effect of inelastic scattering on the electron reflection in multi -quantum barriers (MQBs) has been examined using the damped resonant t unnelling model for the first time. The electron reflectivity in the v irtual barrier region for unstrained GalnAs/lnP MQB deteriorates below 100% by about 10% for phase relaxation time of 0.22ps. We propose a s train-compensated GalnAs/GalnP MQB which not only has virtual barrier 4 times as high as that of an unstrained MQB, but whose reflectivity d eterioration is reduced to less than 5% in comparison with 10% for uns trained MQB for the same phase relaxation time. We have also successfu lly grown a Ga(0.25)ln(0.75)As (1.5% compressive) well/Ga(0.25)ln(0.75 )P (1.2% tensile) barrier short-period superlattice with six wells by chemical beam epitaxy, which exhibits the possibility of fabrication o f the strain-compensated MQBs.