SWIFT-HEAVY-ION INDUCED DAMAGE IN GERMANIUM - AN EVALUATION OF DEFECTINTRODUCTION RATES

N-type lightly doped germanium samples were irradiated at 300 K with s wift heavy ions at the Grand Accelerateur National d'Ions Lourds. Indu ced damage was studied from in situ conductivity and Hall mobility mea surements. By using previously reported deep-level-transient-spectrosc opy results, simulations of experimental curves were performed. The in troduction rates of the different induced defects are extracted from t hese simulations and analyzed in terms of the nuclear and electronic s topping powers of the ions. A partial annealing of the divacancies app ears for the highest values of the electronic stopping power. (C) 1996 American Institute of Physics.