SUPERSONIC JET EPITAXY OF ALUMINUM NITRIDE ON SILICON (100)

Single phase aluminum nitride (0001) has been grown on atomically clea n silicon (100) substrates (720 degrees C greater than or equal to T-s greater than or equal to 620 degrees C) with dual supersonic molecula r beam gas sources. The precursors used were triethylaluminum [TEA; Al (C2H5)(3)] and ammonia (NH3). The maximum growth rate obtained was 0.1 mu m/h. The growth rate was found to depend strongly on the kinetic e nergy of the incident precursors. Single phase films were grown 200-40 0 nm thick. Structural x-ray studies reveal 2 theta full widths at hal f-maxima between 0.20 degrees and 0.35 degrees for the AlN (0002) peak . (C) 1996 American Institute of Physics.