FREE-CARRIER ABSORPTION OF HG1-XCDXTE EPITAXIAL-FILMS

Authors
LI B CHU JH CHEN ZH CHANG Y JI HM TANG DY
Citation
B. Li et al., FREE-CARRIER ABSORPTION OF HG1-XCDXTE EPITAXIAL-FILMS, Journal of applied physics, 79(10), 1996, pp. 7738-7742
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
10
Year of publication
1996
Pages
7738 - 7742
Database
ISI
SICI code
0021-8979(1996)79:10<7738:FAOHE>2.0.ZU;2-Y
Abstract
Free-carrier absorption (FCA) of Hg1-xCdxTe epitaxial films is analyze d by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bu lk materials. Based on the analyses, the carrier concentration, the de nsity and size distribution of Te precipitates, as well as the inclusi on in Hg1-xCdxTe epilayers are derived from fitting the measured FCA s pectra. (C) 1996 American Institute of Physics.