GROWTH AND ELECTRICAL CHARACTERIZATION OF SI DELTA-DOPED GAINP BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

The growth and electrical characterization of Si delta-doped GaInP gro wn by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturate d as a function of doping time or flow rate. Because of the limitation s of Hall-effect measurements, the saturation was explained as the res ult of electron population in satellite L valley. The mobility enhance ment was observed for the delta-doped structure with an enhancement fa ctor of 2-3. A sharp capacitance-voltage profile with a full width at half-maximum of 30 Angstrom was obtained. Depletion-mode Si delta-dope d GaInP field-effect transistors with a gate length of 2 mu m and gate width of 50 mu m were fabricated and showed good device pinch-off cha racteristics. The extrinsic maximum transconductance of 92 mS/mm was o btained and a broad plateau transconductance profile was observed to c onfirm the electron confinement in the V-shape potential well of a del ta-doped GaInP layer. (C) 1996 American Institute of Physics.