INTRINSIC AND EXTRINSIC CAPACITANCES OF IN-PLANE-GATED TRANSISTORS

The intrinsic and extrinsic capacitances of in-plane-gated (IPG) trans istors are calculated by conformal mapping. The capacitance per unit l ength between coplanar areas is only weakly dependent on the separatio n. It is essentially determined by the dielectric constant only and ha s a value of similar to 18 pF/m in air. In both ion-implanted and tren ch-etched IPG transistors the geometry is of minor importance for the low- and high-frequency behavior. (C) 1996 American Institute of Physi cs.