HIGH-SENSITIVITY TO TEMPERATURE AND QUANTUM EFFECTS IN VANADIUM-OXIDEDIODES

Authors
KUZNETSOV VA HANEMAN D
Citation
Va. Kuznetsov et D. Haneman, HIGH-SENSITIVITY TO TEMPERATURE AND QUANTUM EFFECTS IN VANADIUM-OXIDEDIODES, Journal of applied physics, 79(10), 1996, pp. 8109-8111
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
10
Year of publication
1996
Pages
8109 - 8111
Database
ISI
SICI code
0021-8979(1996)79:10<8109:HTTAQE>2.0.ZU;2-E
Abstract
We have fabricated vanadium oxide films by the method of oxidation of evaporated vanadium films, and found it possible to achieve a temperat ure coefficient of the resistance for a diode structure of 25% and mor e per degree Celsius-much higher than any previous result. The nature of the contact influences the sensitivity. The structures showed switc hing behavior, and also in some cases apparent quantum effects. The fi lms are composed of mixed oxides. (C) 1996 American Institute of Physi cs.