ELECTRICAL LOSSES IN HIGH-RESISTIVITY SILICON WITH DEEP

The reasons for the appearance of peaks in the temperature dependences of the electrical losses in the kilohertz range for structures of the type (metal-insulator-semiconductor-insulator-metal) were studied. It was shown that the peaks are due to the change in the conductivity of compensated semiconductors and that their temperature and frequency p ositions makes it possible to determine the electrical conductivity of a high-resistivity material. (C) 1996 American Institute of Physics.