CHARACTERISTIC FEATURES OF TRANSPORT PHENOMENA IN ALTERNATIVELY DOPEDGAAS GA1-XALXAS HETEROSTRUCTURES/

The temperature and magnetic-field dependences of the conductivity of heterostructures alternatively doped with silicon - delta-doping of Ga As and simultaneous uniform doping of the AlxGa1-xAs layer - are inves tigated. The concentration and mobility of the two-dimensional electro ns in quantum-well subbands are determined from the experimental data. The band diagrams of the structures with different distances of the d elta layer from the heteroboundary are calculated. It is shown that su ch structures can have a much higher conductivity than ordinary struct ures. (C) 1996 American Institute of Physics.