MECHANISM OF CURRENT TRANSPORT AND PHOTOELECTRIC CHARACTERISTICS OF PD-SIN-P-SI STRUCTURES

The current-voltage characteristics and photocurrent in the diode stru ctures Pd-SW-p-Si were investigated. Current transport is determined b y double carrier injection in the case of forward bias in the drift ap proximation and in the diffusion approximation in the case of reverse bias. It was found that under reverse bias the photocurrent and dark c urrent are amplified by two orders of magnitude. A section of negative differential resistance with a N-shaped current-voltage characteristi c was found. A qualitative explanation of these phenomena is given tak ing into account the decisive influence of hole and electron trapping centers with deep levels. (C) 1996 American Institute of Physics.