HOT LUMINESCENCE AND ELECTRON-PHONON INTERACTION IN STRUCTURES WITH QUANTUM-WELLS

The electron-phonon interaction in structures with GaAs/AlAs and GaAs/ AlxGa1-xAs quantum wells was investigated experimentally by the hot-ph otoluminescence method. The rate of intraband scattering of 200-meV ho t electrons by phonons was measured as a function of the quantum-well widths in the range 40-140 Angstrom. The energy and the type of phonon s that make the main contribution to the energy relaxation process is determined directly from the energy losses in the hot-luminescence spe ctrum. The results are compared for structures with different barrier compositions. The rates of electron scattering by different types of p honons are calculated on the basis of a continuum dielectric model. Th e experimental results agree satisfactorily with these calculations. ( C) 1996 American Institute of Physics.