CHARACTERISTICS OF SELF-COMPENSATION IN PBSE-CL-SE-EX FILMS

The morphology and electrical properties of epitaxial films of lead se lenide, doped with chlorine and excess selenium, on BaF2, were investi gated experimentally. The films were obtained by vacuum deposition by the hot-wall method. Self-compensation of the donor impurity (chlorine ) by intrinsic defects was recorded in the films with condensation tem peratures T-c above 300 degrees C. It was shown that self-compensation in the films is more difficult to achieve in the presence of point de fects, which at low condensation temperatures T-c completely suppress self-compensation. It was determined that the chlorine content in the films decreases as T-c increases. The conditions under which the degre e of compensation is maximum were estimated. (C) 1996 American Institu te of Physics.