MODIFICATION OF THE PROPERTIES OF AMORPHOUS HYDROGENATED SILICON-CARBIDE A-SI1-XCX-H FILMS AS A RESULT OF ANNEALING

Tile photoluminescence of hydrogenated amorphous silicon carbide a-Si1 -xCx:H films, synthesized by decomposition of the gas mixture (SiH4 C2H2 + Ar/H-2) in a glow-discharge plasma at temperatures of 200-250 d egrees C and vacuum annealed at 400 degrees C in order to modify the p roperties of the material, specifically, the photoluminescence efficie ncy, was investigated. It was shown that annealing changes the structu ral and the optical properties of the films; in particular, the photol uminescence efficiency increased by 1-2 orders of magnitude for a wide range of compositions. (C) 1996 American Institute of Physics.