Lv. Borkovskaya et al., EFFECT OF THE SHAPE OF THE FUNDAMENTAL ABSORPTION-EDGE ON THE SHAPE OF THE GREEN-LUMINESCENCE SPECTRUM OF CDS CRYSTALS, Semiconductors, 30(4), 1996, pp. 400-402
The relation between the shape of the green-luminescence spectra and t
he absorption spectra at 77 K and also the dependence of the shape of
the green-luminescence spectrum on the excitation intensity and the te
mperature in the range 77-4.2 K, were investigated in CdS crystals wit
h different concentrations N-d of shallow uncompensated donors. It was
shown that the increase in the intensity of the phonon replicas with
respect to the intensity of the zero-phonon line with increasing N-d i
s due to the shift of the absorption edge into the region of longer wa
velengths as a result of the effect of the fields of ionized shallow d
onors on the edge of the conduction band. (C) 1996 American Institute
of Physics.