FABRICATION, CHARACTERIZATION, AND APPLICATIONS OF HIGH-PERFORMANCE ALGAAS-BASED BURIED-HETEROSTRUCTURE DIODE-LASERS

Data are presented on buried-heterostructure (BH) AlGaAs/GaAs and InGa As/AlGaAs quantum-well diode lasers (DLs) fabricated by low-temperatur e liquid phase mesa melt etching and regrowth, The basic laser structu res were grown by either molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Native oxides were used as a mask in the processes of melt etching and regrowth. Measurements of excess mirror temperature and parameters of internal second-harmonic generati on (SHG) were used for DL characterization. The equalization of beam d ivergence in both planes, perpendicular and parallel to the active lay er, was accomplished by using cylindrical microlenses, at 1 W of radia nt power in continuous-wave (cw) operation. The results on medical app lications and pumping Er3+-doped YAG crystals are reported. (C) 1996 S ociety of Photo-Optical Instrumentation Engineers.