Da. Hady et al., THE THERMOELECTRIC-POWER, THE DARK ELECTRICAL-RESISTIVITY AND THE GRAIN-BOUNDARY POTENTIAL BARRIER IN CDIN2SE4 THIN-FILMS, Physica. A, 226(3-4), 1996, pp. 324-329
The thermoelectric power (Seebeck coefficient S) was measured for seve
ral preannealed CdIn2Se4 thin films of different thicknesses. The ther
moelectric power measurements indicate that the preannealed CdIn2Se4 t
hin films are n-type semiconductors. The thermoelectric was utilized t
o calculate the free charge carrier concentration in the temperature r
ange of 298-453 K. Measurements of the dark electrical resistivity for
samples of different thicknesses as a function of temperature in the
temperature range of 298-423 K were analyzed to give the thermal activ
ation energy of the free charge carriers. The free charge carrier conc
entration calculated from the thermoelectric measurements for each sam
ple in connection with the sample conductivity at a given temperature
were used to calculate the free charge carrier mobility from which the
grain boundary potential barrier was evaluated. It was found that the
grain boundary potential barrier plays a distinguishable role in the
behaviour of the dark electrical conductivity.