EFFECT OF BORON DOPING ON THE CRYSTAL QUALITY OF CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS

Baron doping of chemical vapor deposited (CVD) diamond films plays an important role for modification of their electrical properties, as wel l as it improves crystallinity of the resulting films. A comparative s tudy of crystalline quality has been made for boron doped and undoped CVD diamond. It is also found that the edge emission near 240 nm in ca thodoluminescence (CL) is significantly intensified by boron incorpora tion. It is observed that the hydrogen plasma etching rate of B-doped CVD diamond is much smaller than the etching rate of undoped diamond. This proves the fact, that baron incorporation during CVD growth of di amond films can lead to better crystal quality. (C) 1996 American Inst itute of Physics.