MOLECULAR-BEAM EPITAXY OF LOW DEFECT DENSITY (LESS-THAN-OR-EQUAL-TO-1X10(4)CM(-2)) ZNSSE ON GAAS

We study the growth of pseudomorphic ZnSSe layers on GaAs. The depende nce of the epilayer quality on Zn exposure to the GaAs surface is inve stigated. Zn treatment prior to the ZnSe buffer growth on the As-rich GaAs surface results in the lowest defect density. Transmission electr on microscopy studies show that an atomic scale smooth interface is fo rmed. Eased on the etch pit density and photoluminescence image analys is, ZnSSe layers with defect density less than or equal to 1x10(4) cm( -2) can be reproducibly obtained. (C) 1996 American Institute of Physi cs.