DOPANT DELINEATION ON SI(100) USING ANODIC-OXIDATION AND ATOMIC-FORCEMICROSCOPY

A procedure has been developed for delineation of lateral variations i n the doping of Si(100). The procedure relies on the fact that the thi ckness of electrochemically grown oxide depends on the dopant density and type. By growing the oxide and then etching it off in cycles, the silicon is selectively removed according to the doping density. By usi ng atomic force microscopy, the electrically effective n(+), Il, and p -type regions of the sample are delineated. (C) 1996 American Institut e of Physics.