INVESTIGATION ON DIRECT BONDING OF III-V SEMICONDUCTOR WAFERS WITH LATTICE MISMATCH AND ORIENTATION MISMATCH

The direct bonding of various III-V wafers with mismatches in terms of lattice constants and surface orientations was systematically investi gated for an In-Ga-As-P system. Many wafer combinations were bonded wi th sufficient mechanical strength, despite those mismatches. The bondi ng interface of (001) GaP and (110) InP was observed by transmission e lectron microscopy and found to be bonded at the atomic level without any defects occurring. The electrical property of the bonding interfac e was examined for several bonded structures of GaAs and InP. The resu lts support a novel concept ''free-orientation integration,'' which sh ould be achieved by direct bonding. (C) 1996 American Institute of Phy sics.