THE INFLUENCE OF TISI2 AND COSI2 GROWTH ON SI NATIVE POINT-DEFECTS - THE ROLE OF THE DIFFUSING SPECIES

Boron- and Sb-doped superlattice samples have been used to investigate intrinsic point defects in Si after formation of TiSi2 and CoSi2 film s from codeposited metal and Si. The as-deposited films had the compos itions Ti, TiSi0.8, TiSi2.2, and CoSi0.8. After annealing in argon for 1 h at 850 degrees C, the films formed TiSi2 and CoSi2, respectively. All samples showed the same slight interstitial undersaturation and v acancy supersaturation. Since TiSi2 and all its precursor phases form completely by Si diffusion and the CoSi+Si-->CoSi2 transformation occu rs by Co diffusion, this indicates that the diffusing species during f ilm growth is not the determining factor in the point defect perturban ce in the Si substrate. (C) 1996 American Institute of Physics.