MEASUREMENT OF ALN GAN (0001) HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY/

Authors
WALDROP JR GRANT RW
Citation
Jr. Waldrop et Rw. Grant, MEASUREMENT OF ALN GAN (0001) HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY/, Applied physics letters, 68(20), 1996, pp. 2879-2881
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
68
Issue
20
Year of publication
1996
Pages
2879 - 2881
Database
ISI
SICI code
0003-6951(1996)68:20<2879:MOAG(H>2.0.ZU;2-F
Abstract
X-ray photoemission spectroscopy has been used to measure the valence band offset Delta E(v) for the AlN/GaN (0001) heterojunction interface . The heterojunction samples were grown by reactive molecular beam epi taxy on 6H-SiC (0001) substrates. A nested interface band alignment wi th Delta E(v) = 1.36 +/- 0.07 eV is obtained (Delta E(c)/Delta E(v) = 52/48). (C) 1996 American Institute of Physics.