Jr. Waldrop et Rw. Grant, MEASUREMENT OF ALN GAN (0001) HETEROJUNCTION BAND OFFSETS BY X-RAY PHOTOEMISSION SPECTROSCOPY/, Applied physics letters, 68(20), 1996, pp. 2879-2881
X-ray photoemission spectroscopy has been used to measure the valence
band offset Delta E(v) for the AlN/GaN (0001) heterojunction interface
. The heterojunction samples were grown by reactive molecular beam epi
taxy on 6H-SiC (0001) substrates. A nested interface band alignment wi
th Delta E(v) = 1.36 +/- 0.07 eV is obtained (Delta E(c)/Delta E(v) =
52/48). (C) 1996 American Institute of Physics.