FACILITY FOR GROWING EPITAXIAL-FILMS OF IV-VI COMPOUNDS

Authors
LEVCHENKO VI POSTNOVA LI
Citation
Vi. Levchenko et Li. Postnova, FACILITY FOR GROWING EPITAXIAL-FILMS OF IV-VI COMPOUNDS, Instruments and experimental techniques, 38(6), 1995, pp. 794-796
Citations number
5
Categorie Soggetti
Instument & Instrumentation",Engineering
Journal title
Instruments and experimental techniques → ACNP
ISSN journal
00204412
Volume
38
Issue
6
Year of publication
1995
Part
2
Pages
794 - 796
Database
ISI
SICI code
0020-4412(1995)38:6<794:FFGEOI>2.0.ZU;2-T
Abstract
A modular facility for vapor-phase epitaxial growth of IV-VI semicondu ctor films is described. Using general-purpose modules, either a sourc e of molecular beam or a reactor with a quasi-closed volume can be ass embled. The temperature of the solid compound source can be tuned with in 400-900 degrees C, that of a volatile component source between 50 a nd 500 degrees C.