EXTRACTION OF THE SERIES RESISTANCE AND THE EFFECTIVE MOBILITY IN ENHANCEMENT MOSFETS FROM WEAK TO STRONG INVERSION USING A SINGLE TRANSISTOR

This work presents a new approach for the simultaneous determination o f the effective channel mobility and the parasitic series resistance a s a function of gate voltage in enhancement MOSFETs. The proposed meth od is applicable for short channel devices as well as long channel one s. It also takes into consideration the effect of interface traps and the dependence of the effective channel length on gate bias, The metho d is based on the measurement of the dynamic transconductance, gate-ch annel capacitance and the ohmic region drain current all on a single M OS transistors, The obtained results suggest a peak for the effective mobility versus gate voltage near threshold. The parasitic series resi stance for short channel devices shows only slight dependence on the g ate bias in the whole strong inversion region. On the contrary, for lo ng channel devices, the series resistance significantly decreases with increasing gate voltage at the onset of strong inversion and then ten ds to level off as the device is pushed deeper in strong inversion.