Detailed level-by-level calculations of the excitation-autoionization
(EA) cross sections and rate coefficients were performed using the rel
ativistic distorted-wave method along the Cu isoelectronic sequence fo
r all the elements with 34 less than or equal to Z less than or equal
to 92. While in a previous work only the 3d-4l inner-shell collisional
excitations had been taken into account, the present extensive calcul
ations include the 3d(10)4s-3d(9)4snl (n=4-7 and l=0-n-1) and the 3p(6
)3d(10)4s-3p(5)3d(10)4snl (n=4,5 and l=0-n-1) excitations. An extrapol
ation method is used to evaluate the contribution for higher principal
quantum numbers. Configuration mixing and secondary autoionization pr
ocesses following radiative decay from autoionizing levels are also in
cluded. The results show that the EA processes give a dominant contrib
ution compared to direct ionization, up to a factor of about 15 at 2=4
3. The additional inner-shell excitations for Z<55 produce an increase
in the EA effect varying from 20% to a factor of 2, with respect to t
he previously predicted 3d-4l EA rates. The additional excitations are
the most significant for heavy elements with Z>55, since they open EA
channels, resulting in an EA rate varying typically along the sequenc
e from 3 to 1 times the direct ionization rate.