ROLE OF PLASMA COOLING, HEATING, AND MEMORY EFFECTS IN SUBPICOSECOND PULSE-PROPAGATION IN SEMICONDUCTOR AMPLIFIERS

Citation
Ra. Indik et al., ROLE OF PLASMA COOLING, HEATING, AND MEMORY EFFECTS IN SUBPICOSECOND PULSE-PROPAGATION IN SEMICONDUCTOR AMPLIFIERS, Physical review. A, 53(5), 1996, pp. 3614-3620
Citations number
34
Categorie Soggetti
Physics
Journal title
ISSN journal
10502947
Volume
53
Issue
5
Year of publication
1996
Pages
3614 - 3620
Database
ISI
SICI code
1050-2947(1996)53:5<3614:ROPCHA>2.0.ZU;2-L
Abstract
Based on a microscopic theory of a two-band semiconductor light amplif ier, we show that plasma heating, cooling, and ultrafast memory effect s all act in concert to produce strong distortion of subpicosecond pul ses propagating in semiconductor amplifiers. Plasma heating, spectral hole burning, and carrier density depletion are responsible for satura tion of the gain seen by a propagating intense femtosecond pulse in th e amplifier. Plasma cooling replenishes the carrier population on the trailing edge of the pulse, leading to pulse broadening as a consequen ce of gain regeneration. The inclusion of memory effects in the descri ption of dephasing processes goes beyond the usual Markov assumption o f constant dephasing rates; it significantly affects the dynamical pul se reshaping processes.