PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

Authors
OVSYUK VN REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK VASILEV VV ZAHARYASH TI SIDOROV YG DVORETSKY SA MIKHAYLOV NN LIBERMAN VG VARAVIN VS
Citation
Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Infrared physics & technology → ACNP
ISSN journal
13504495
Volume
37
Issue
3
Year of publication
1996
Pages
321 - 323
Database
ISI
SICI code
1350-4495(1996)37:3<321:PPBOP(>2.0.ZU;2-9
Abstract
This paper reports on the realization of small area long-wavelength in frared (LWIR) photodiodes based on CdHgTe films grown by molecular bea m epitaxy (MBE). The composition of the ternary compound is controlled in situ by a single-wave ellipsometer that offers the possibility to grow epilayers with a desirable composition profile across the film th ickness. Photodiodes have a vertical configuration and have been fabri cated using planar technology by annealing under an anodic oxide film.