SMALL-SIGNAL AND LARGE-SIGNAL MEASUREMENTS OF LOW-TEMPERATURE GAAS-FETS

Low-temperature (LT) GaAs FETs have been realized for high I x V produ cts. They have been extensively characterized under dc, rf pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has bee n demonstrated. Under de conditions I x V products of 2.5 W/mm are obt ained. Under microwave frequencies, only 0.4 W/mm were measured on thi s device. We discuss tile relationship between the dielectric relaxati on of LT GaAs and the low-power performance of the device. New device structures are proposed. (C) 1996 John Wiley & Sons, Inc.