VAPOR GROWTH AND CHARACTERIZATION OF BULK ZNSE SINGLE-CRYSTALS

Citation
Yv. Korostelin et al., VAPOR GROWTH AND CHARACTERIZATION OF BULK ZNSE SINGLE-CRYSTALS, Journal of crystal growth, 161(1-4), 1996, pp. 51-59
Citations number
18
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
161
Issue
1-4
Year of publication
1996
Pages
51 - 59
Database
ISI
SICI code
0022-0248(1996)161:1-4<51:VGACOB>2.0.ZU;2-B
Abstract
Large (up to 60 mm in diameter) untwinned ZnSe single crystals have be en grown in sealed quartz ampoules by seeded physical vapour transport and seeded chemical vapour transport with hydrogen. The dependence of structure perfection on the seed quality and its orientation, the sou rce design, the gas filling of the growth ampoule and the temperature regime was researched. Selective chemical etching topography, X-ray di ffraction rocking curve and cathodoluminescence studies are presented to characterize grown crystals. The influence of oxygen impurity on cr ystal emission and weakening of this influence in crystals grown in hy drogen was found. The results of crystal annealing in Zn vapour and Zn melt are discussed.