OXIDATION MECHANISM INVOLVED IN THIN TIN FILMS

Citation
Jt. Abraham et al., OXIDATION MECHANISM INVOLVED IN THIN TIN FILMS, INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 3(3), 1996, pp. 109-113
Citations number
16
Categorie Soggetti
Engineering
ISSN journal
09714588
Volume
3
Issue
3
Year of publication
1996
Pages
109 - 113
Database
ISI
SICI code
0971-4588(1996)3:3<109:OMIITT>2.0.ZU;2-G
Abstract
Tin in thin film form reaches its highest oxidation state SnO2 either through direct or indirect phase transformation. The direct or indirec t transformaion depends on whether SnO is in the alpha or beta phase, respectively. When SnO2 was reactively deposited, SnO2 films formed th rough a direct transformation exhibited high conductivity and optical transmission than those formed through an indirect phase transformatio n. It has been observed that a direct transformation helps to reduce t he substrate temperature required for the reactive deposition of SnO2.