MOSFET GLOBAL MODELING FOR DEEP-SUBMICRON DEVICES WITH A MODIFIED BSIM1 SPICE MODEL

A modified Berkeley short-channel IGFET model (BSIM1) has been develop ed to accurately model the I-V characteristics and circuit performance of deep submicron MOSFET devices, The improved model provides a simpl e and more efficient parameter acquisition procedure for MOSFET global modeling in comparison to the original BSIM1 model. The procedure for extracting the global geometry scalable model parameters is described . The extraction procedure provides a decoupling between de and ac mod eling resulting in more accurate time-domain circuit simulations, The proposed modeling procedure eliminates the negative conductance proble m experienced in the original BSIM1. The validity of the model is supp orted by comparisons between measured and simulated results. The focus of this paper is on the digital applications of the BSIM1 SPICE model .