POSITRON QUANTUM REFLECTION IN THIN METAL-FILMS AND EFFICIENT GENERATION OF HIGH-BRIGHTNESS LOW-ENERGY POSITRON BEAMS AT 4.2 K

Citation
Fm. Jacobsen et Kg. Lynn, POSITRON QUANTUM REFLECTION IN THIN METAL-FILMS AND EFFICIENT GENERATION OF HIGH-BRIGHTNESS LOW-ENERGY POSITRON BEAMS AT 4.2 K, Physical review letters, 76(22), 1996, pp. 4262-4264
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
76
Issue
22
Year of publication
1996
Pages
4262 - 4264
Database
ISI
SICI code
0031-9007(1996)76:22<4262:PQRITM>2.0.ZU;2-R
Abstract
High energy positrons implanted into a metal having a negative positro n affinity, phi(+), can be reemitted into vacuum with an energy equal to -phi(+) smeared by the thermal energy. Reduction of the temperature to 4.2 K to increase the brightness of the reemitted positrons is nor mally offset by a loss of emission efficiency due to the quantum mecha nical reflection at the metal-vacuum interface, approaching unity as t he temperature is reduced to zero. By using a thin moderator (0.1 mu m ), the quantum reflection is compensated by multiple encounters with t he surface, resulting in on efficient high brightness low energy posit ron moderator. Our results show that efficient accumulation of positro ns at 4.2 K necessary for the formation of antihydrogen can be done if a thin metal film is used to moderate the positrons.