SURFACE AND SUBSURFACE 1-KEV ELECTRON-STIMULATED REDUCTION OF SAPPHIRE STUDIED BY ELECTRON-SPECTROSCOPY

Electron irradiation may change the surface composition of solids by e lectron stimulated processes. In particular sapphire, alpha-Al2O3, is likely to be vulnerable to these processes because of the large differ ence in electronegativity between the cation and anion. In the present work the effect of 1 keV electron irradiation on the near surface com position of sapphire was studied. The use of the whole range of the el ectron spectrum produced by 1 keV primary electrons has provided a det ailed picture of the variation with depth and electron dose of the sur face and near surface of electron irradiated alpha-Al2O3(1000). Electr on irradiation doses were in the range of 0.7 to 26 C/cm(2). After a d ose of about 1 C/cm(2) sufficiently large clusters of aluminium were p roduced to allow the generation of the Al(LVV) 67 eV Auger peak, while after about 8 C/cm(2) the collective excitations surface and bulk pla smons were generated, An equilibrium in the composition of the first n anometre depth of the surface is reached after a dose of about 6 C/cm( 2), with 50% of the aluminium in alumina being reduced to the metallic form, After a dose of about 13 C/cm(2), the composition of the first 2 nm reaches equilibrium, while deeper alumina continues to be reduced .