COPPER CVD PRECURSORS CONTAINING ALKYL 3-OXOBUTANOATE LIGANDS

Authors
HWANG S CHOI H SHIM I
Citation
S. Hwang et al., COPPER CVD PRECURSORS CONTAINING ALKYL 3-OXOBUTANOATE LIGANDS, Chemistry of materials, 8(5), 1996, pp. 981
Citations number
21
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
8
Issue
5
Year of publication
1996
Database
ISI
SICI code
0897-4756(1996)8:5<981:CCPCA3>2.0.ZU;2-G
Abstract
Bis(alkyl 3-oxobutanoato)copper(II) compounds were synthesized and uti lized to deposit copper films, where alkyl = methyl, ethyl, 2-methoxye thyl, tert-butyl, and benzyl. Copper films were deposited at temperatu res as low as 160 degrees C. They showed conformal coverage on pattern ed substrates with holes of diameter as small as 0.35 mu m and aspect ratio as high as 3. Average grain size of the deposited copper films d epended on substrate temperature. The alkyl 3-oxobutanoate ligands Lib erated from the precursors analyzed to be intact during the deposition processes.