MINIATURIZATION OF AN ELECTRON DEVICE USING INVERSE PROBLEM METHODOLOGY

The miniaturization of electron devices has its advantages in dense ci rcuits and high frequency devices. As can be seen in the current liter ature, considerable effort is devoted on the problem of miniaturizing modern electronic devices to anew high speed and high density. Conside ring the effects In short channel metal oxide semiconductor field tran sistors (MOSFET), In practice the device is scaled to preserve the lon g-channel characteristics after miniaturization.In this work, several parameters are chosen and their sensitivity analysis is used for the m iniaturization of MOSFET. The objective is to miniaturize the device i n such a way to avoid the break down effects at high bias.