We calculate the rectification coefficient a(rect) and the second-harm
onic generation coefficient a(2 Omega) for a quantum dot biased with a
n ac field. The coefficients are calculated as functions of the gate v
oltage (i.e. the positions of the resonant levels) and the frequency o
f the applied field. The rectification coefficient has a peaked depend
ence on the gate voltage with one central (negative) and two side (pos
itive) peaks around the voltage at which the corresponding energy leve
l for interacting electrons is equal to the collector electrode chemic
al potential. The peak heights are related to the average number of el
ectrons in the dot-a feature which is a direct consequence of the elec
tron interactions. The second-harmonic generation coefficient has simi
lar behaviour for low frequencies (a(rect) = a(2 Omega) at zero freque
ncy). The frequency dependence of the rectification coefficient has fe
atures resulting from the photon-assisted tunnelling through the dot.
The resonant-like enhancement of the rectification coefficient cannot
be attributed to the photon-assisted transitions between different res
onant levels in the dot.