CORRELATION OF ELECTRON AND PROTON-IRRADIATION INDUCED DAMAGE IN INP SOLAR-CELLS

The measured degradation of epitaxial shallow homojunction n(+)p InP s olar cells under 1-MeV electron irradiation is correlated with that me asured under 3-MeV proton irradiation based on 'displacement damage do se'. The measured data ave analyzed as a function of displacement dama ge dose from which an electron-to-proton dose equivalency ratio is det ermined which enables the electron and proton degradation data to be d escribed by a single degradation carve. It is discussed how this singl e curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the r adiation response of lnP and GaAs/Ge cells on an absolute damage energ y scale, The comparison shows InP to be inherently move resistant to d isplacement damage deposition than the GaAs/Ge.