HIGH-EFFICIENCY SELECTIVELY OXIDIZED MBE GROWN VERTICAL-CAVITY SURFACE-EMITTING LASERS

Authors
WEIGL B GRABHERR M REINER G EBELING KJ
Citation
B. Weigl et al., HIGH-EFFICIENCY SELECTIVELY OXIDIZED MBE GROWN VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 32(6), 1996, pp. 557-558
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
6
Year of publication
1996
Pages
557 - 558
Database
ISI
SICI code
0013-5194(1996)32:6<557:HSOMGV>2.0.ZU;2-G
Abstract
The authors have used conventional solid source MBE with Be p-type dop ing and single layer selective oxidation to produce 20 mu m diameter V CSELs (lambda = 980nm) with 47% wallplug efficiency at 10mW output pow er and over 40mW maximum output power in a configuration without heats inking.