COLOR DETECTION USING A BURIED DOUBLE P-N-JUNCTION STRUCTURE IMPLEMENTED IN THE CMOS PROCESS

Authors
LU GN CHOUIKHA MB SOU G SEDJIL M
Citation
Gn. Lu et al., COLOR DETECTION USING A BURIED DOUBLE P-N-JUNCTION STRUCTURE IMPLEMENTED IN THE CMOS PROCESS, Electronics Letters, 32(6), 1996, pp. 594-596
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
6
Year of publication
1996
Pages
594 - 596
Database
ISI
SICI code
0013-5194(1996)32:6<594:CDUABD>2.0.ZU;2-Z
Abstract
The authors present a novel technique for monochromatic colour detecti on. By using a buried double p-n junction (BDJ) structure, wavelength- dependent photocurrents I1 and I2 can be measured. And the incident li ght wavelength can be identified from the ratio I2/I1. The device oper ation was verified with a test circuit implemented in CMOS process.