NEAR-IDEAL PLATINUM-GAN SCHOTTKY DIODES

Fabrication and characterisation of nearly ideal Pt/n-GaN Schottky bar rier diodes are described. The n-GaN employed was grown by the reactiv e molecular beam epitaxy method. The capacitance/voltage (C/V) charact eristics indicate marginal trap density in the semiconductor, and the current/voltage (I/V) characteristics give an ideality factor very clo se to unity. Barrier height deduced both from I/V and C/V measurements are similar to 1.10 eV provided the influence of scattering is consid ered negligible. This confirms again the near absence of interface tra ps in the diodes, and suggests that the effective mass of an electron in GaN is 0.2+/-0.02.