V. Swaminathan et al., EFFECT OF ZN ON THE ELECTROOPTICAL CHARACTERISTICS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN 1.3-MU-M INGAASP INP LASERS/, Electronics Letters, 32(7), 1996, pp. 661-662
The diffusion behaviour of Zn during MOCVD of InGaAsP/InP capped mesa
buried heterostructure lasers has been reported to exhibit a threshold
concentration for significant diffusion, which can result in Zn in th
e active region. The authors report on the electro-optical characteris
tics of these lasers and show the effect of Zn in the active region on
the threshold current and differential quantum efficiency.