EFFECT OF ZN ON THE ELECTROOPTICAL CHARACTERISTICS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN 1.3-MU-M INGAASP INP LASERS/

Authors
SWAMINATHAN V REYNOLDS CL GEVA M
Citation
V. Swaminathan et al., EFFECT OF ZN ON THE ELECTROOPTICAL CHARACTERISTICS OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN 1.3-MU-M INGAASP INP LASERS/, Electronics Letters, 32(7), 1996, pp. 661-662
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
7
Year of publication
1996
Pages
661 - 662
Database
ISI
SICI code
0013-5194(1996)32:7<661:EOZOTE>2.0.ZU;2-G
Abstract
The diffusion behaviour of Zn during MOCVD of InGaAsP/InP capped mesa buried heterostructure lasers has been reported to exhibit a threshold concentration for significant diffusion, which can result in Zn in th e active region. The authors report on the electro-optical characteris tics of these lasers and show the effect of Zn in the active region on the threshold current and differential quantum efficiency.