LOW-THRESHOLD CURRENT 780NM ALGAAS BURIED HETEROSTRUCTURE LASERS ON RIDGED GAAS SUBSTRATE ALIGNED TO [01(1)OVER-BAR], FABRICATED USING SINGLE-STEP MOCVD

Authors
NARUI H IMANISHI D
Citation
H. Narui et D. Imanishi, LOW-THRESHOLD CURRENT 780NM ALGAAS BURIED HETEROSTRUCTURE LASERS ON RIDGED GAAS SUBSTRATE ALIGNED TO [01(1)OVER-BAR], FABRICATED USING SINGLE-STEP MOCVD, Electronics Letters, 32(7), 1996, pp. 664-665
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
7
Year of publication
1996
Pages
664 - 665
Database
ISI
SICI code
0013-5194(1996)32:7<664:LC7ABH>2.0.ZU;2-A
Abstract
Buried heterostructure (BH) AlGaAs lasers were fabricated using single -step metal organic chemical vapour deposition (MOCVD) on a ridged GaA s substrate aligned to the [011&macr;] direction. A low threshold curr ent of 8mA was obtained and the characteristic temperature was 182.1K. The lasing wavelength was similar to 780nm.