SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES

Authors
BESSHO Y UETANI T HIROYAMA R KOMEDA K SHONO M IBARAKI A YODOSHI K NIINA T
Citation
Y. Bessho et al., SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES, Electronics Letters, 32(7), 1996, pp. 667-668
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
7
Year of publication
1996
Pages
667 - 668
Database
ISI
SICI code
0013-5194(1996)32:7<667:S6BSMA>2.0.ZU;2-7
Abstract
Self-pulsating 630nm band AlGaInP laser diodes with a strain-compensat ed MQW active layer have been successfully developed. A low threshold current of 48mA was achieved, and relative intensity noise (RIN) was < 7 x 10(-14)Hr(-1). These lasers have operated for more than 1000h unde r 5mW at 60 degrees C.