ALSB INAS HEMTS WITH HIGH TRANSCONDUCTANCE AND NEGLIGIBLE KINK EFFECT/

Authors
BOOS JB KRUPPA W PARK D MOLNAR B BENNETT BR
Citation
Jb. Boos et al., ALSB INAS HEMTS WITH HIGH TRANSCONDUCTANCE AND NEGLIGIBLE KINK EFFECT/, Electronics Letters, 32(7), 1996, pp. 688-689
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
7
Year of publication
1996
Pages
688 - 689
Database
ISI
SICI code
0013-5194(1996)32:7<688:AIHWHT>2.0.ZU;2-N
Abstract
AlSb/lnAs HEMTs with a 200nm gate length have been fabricated and exhi bit a low-field source-drain resistance of 0.6 Omega mm, a transconduc tance as high as 1.3S/mm, and an effective electron velocity of 3.5 x 10(7)cm/s. The HEMTs also have a negligible kink effect.