HIGH-FREQUENCY AND LOW-NOISE C-DOPED GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOCVD USING TEA AND TBP/

Authors
YANG YF HSU CC YANG ES
Citation
Yf. Yang et al., HIGH-FREQUENCY AND LOW-NOISE C-DOPED GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOCVD USING TEA AND TBP/, Electronics Letters, 32(7), 1996, pp. 689-691
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
7
Year of publication
1996
Pages
689 - 691
Database
ISI
SICI code
0013-5194(1996)32:7<689:HALCGG>2.0.ZU;2-O
Abstract
A C-doped GalnP/GaAs heterojunction bipolar transistor (HBT) groan by MOCVD using TBP and TEA is demonstrated. A current gain of 60, a cutof f frequency of 59GHz, and a maximum oscillation frequency of 68GHz wer e obtained for a 5 x 15 mu m(2) self-aligned HBT, A minimum noise figu re of 1.4-2.6 was measured in the frequency range of 2-18GHz. The resu lts show that TEA and TBP are suitable MOCVD sources for growing high quality HBT materials.