UNIFORMLY BEAM EXPANDED 1.3-MU-M LASER-DIODES WITH THIN SEPARATE-CONFINEMENT HETEROSTRUCTURE LAYERS FOR HIGH COUPLING EFFICIENCY AND GOOD TEMPERATURE CHARACTERISTIC

Authors
FUKANO H YOKOYAMA K KADOTA Y KONDO Y UEKI M YOSHIDA J
Citation
H. Fukano et al., UNIFORMLY BEAM EXPANDED 1.3-MU-M LASER-DIODES WITH THIN SEPARATE-CONFINEMENT HETEROSTRUCTURE LAYERS FOR HIGH COUPLING EFFICIENCY AND GOOD TEMPERATURE CHARACTERISTIC, Electronics Letters, 32(9), 1996, pp. 819-821
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
9
Year of publication
1996
Pages
819 - 821
Database
ISI
SICI code
0013-5194(1996)32:9<819:UBE1LW>2.0.ZU;2-C
Abstract
Low-loss-fibre coupling 1.3 mu m laser diodes with excellent temperatu re characteristics were fabricated by employing thin (20nm) separate c onfinement heterostructure layers. Fabricated LDs with an active layer width of 1.5 mu m show singlemode-fibre coupling loss of 2.6dB, thres hold current I-th of 16.4 (51.0) mA and high efficiency of 0.5 (0.3) W /A at 25 (85)degrees C, respectively.