1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/

Authors
DIETTE F LANGREZ D CODRON JL DELOS E THERON D SALMER G
Citation
F. Diette et al., 1510MS MM 0.1-MU-M GATE LENGTH PSEUDOMORPHIC HEMTS WITH INTRINSIC CURRENT GAIN CUTOFF FREQUENCY OF 220GHZ/, Electronics Letters, 32(9), 1996, pp. 848-850
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
9
Year of publication
1996
Pages
848 - 850
Database
ISI
SICI code
0013-5194(1996)32:9<848:1M0GLP>2.0.ZU;2-R
Abstract
The state of the art for a planar doped pseudomorphic Al0.2Ga0.8As/In0 .2Ga0.8As HEMT with a gate length of 0.1 mu m is presented. The device s exhibit an extrinsic and intrinsic transconductance of 1070 and 1510 mS/mm, respectively, a maximum current density of 550 mA/mm and a pea k current gain cutoff frequency of 220 GHz. These results are the high est ever reported for HEMTs fabricated on GaAs substrates.