FULLY SELF-ALIGNED SI BIPOLAR-TRANSISTOR WITH COLLECTOR AND BASE GROWN USING SILANE-ONLY SELECTIVE EPITAXY

Authors
GREGORY HJ BONAR JM ASHBURN P PARKER GJ
Citation
Hj. Gregory et al., FULLY SELF-ALIGNED SI BIPOLAR-TRANSISTOR WITH COLLECTOR AND BASE GROWN USING SILANE-ONLY SELECTIVE EPITAXY, Electronics Letters, 32(9), 1996, pp. 850-851
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
9
Year of publication
1996
Pages
850 - 851
Database
ISI
SICI code
0013-5194(1996)32:9<850:FSSBWC>2.0.ZU;2-F
Abstract
A fully self-aligned bipolar process is described, in which the collec tor and base are grown using silane-only selective epitaxy. Ideality f actors of 1.004 and 1.15 are obtained for the collector and base chara cteristics. These promising results demonstrate the suitability of sil ane-only selective epitaxy for high-speed bipolar applications.