IMPLANT ISOLATION SCHEME FOR CURRENT CONFINEMENT IN GRADED-GAP GUNN-DIODES

Authors
HUTCHINSON S STEPHENS J CARR M KELLY MJ
Citation
S. Hutchinson et al., IMPLANT ISOLATION SCHEME FOR CURRENT CONFINEMENT IN GRADED-GAP GUNN-DIODES, Electronics Letters, 32(9), 1996, pp. 851-852
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
9
Year of publication
1996
Pages
851 - 852
Database
ISI
SICI code
0013-5194(1996)32:9<851:IISFCC>2.0.ZU;2-C
Abstract
Multiple energy proton implants have been established as an alternativ e to wet chemical etching for the definition of electrically active ar eas of low-medium power graded-gap Gunn diodes. DC characteristics, ou tput power and noise performance are identical to diodes from the same wafer, fabricated using the existing mesa process. Thus implant isola tion is well suited to Gunn diode fabrication, resulting in a planar p rocess.