IMPROVEMENT OF SOI MOS CURRENT-MIRROR PERFORMANCES USING SERIAL-PARALLEL ASSOCIATION OF TRANSISTORS

Authors
DECEUSTER D FLANDRE D COLINGE JP CRISTOLOVEANU S
Citation
D. Deceuster et al., IMPROVEMENT OF SOI MOS CURRENT-MIRROR PERFORMANCES USING SERIAL-PARALLEL ASSOCIATION OF TRANSISTORS, Electronics Letters, 32(4), 1996, pp. 278-279
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
4
Year of publication
1996
Pages
278 - 279
Database
ISI
SICI code
0013-5194(1996)32:4<278:IOSMCP>2.0.ZU;2-6
Abstract
The serial-parallel association of SOI MOSFETs proves to be useful for increasing the breakdown voltage and the early voltage of transistor structures. This permits one to realise current mirrors with an output -to-input current ratio close to unity in the weak, moderate and stron g inversion regimes of the MOSFETs.